Power electronics with wide bandgap materials: Toward greener, more efficient technologies. (8th May 2015)

• Record Type: Journal Article
• Authors: Iacopi, Francesca; Van Hove, Marleen; Charles, Matthew; Endo, Kazuhiro
• Is Part Of: MRS bulletin. Volume 40:Number 5(2015:May)
• Page Start: 390
• Page End: 395
• Publication Date: 2015-05-08
• Subjects: Si, -- C, -- Ga, -- nitride, -- thin film, -- epitaxy, -- devices; Materials -- Periodicals; 620.11
• DOI: 10.1557/mrs.2015.71
• Languages: English
• ISSNs: 0883-7694

Abstract

Abstract: Abstract : Greener technologies for more efficient power generation, distribution, and delivery in sectors ranging from transportation and generic energy supply to telecommunications are quickly expanding in response to the challenge of climate change. Power electronics is at the center of this fast development. As the efficiency and resiliency requirements for such technologies can no longer be met by silicon, the research, development, and industrial implementation of wide bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) are progressing at an unprecedented pace. This issue of MRS Bulletin, although certainly not exhaustive, provides an overview of the pace and quality of research revolving around GaN and SiC power electronics, from the choice of substrates, film growth, devices, and circuits to examples of applications.