Cite
HARVARD Citation
Yang, C. et al. (2015). Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p–n diode. Microelectronics journal. 46 (12), pp. 1392-1397. [Online].
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Yang, C. et al. (2015). Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p–n diode. Microelectronics journal. 46 (12), pp. 1392-1397. [Online].