Axis symmetry of silicon molten zone interface shape under a mirror-shifting-type infrared convergent-heating floating-zone method. Issue 48 (23rd November 2015)
- Record Type:
- Journal Article
- Title:
- Axis symmetry of silicon molten zone interface shape under a mirror-shifting-type infrared convergent-heating floating-zone method. Issue 48 (23rd November 2015)
- Main Title:
- Axis symmetry of silicon molten zone interface shape under a mirror-shifting-type infrared convergent-heating floating-zone method
- Authors:
- Hossain, Md. Mukter
Watauchi, Satoshi
Nagao, Masanori
Tanaka, Isao - Abstract:
- Abstract : Axis symmetry of the silicon molten zone shape, which is dependent on the position of the mirror-lamp (M-L) system, is related to the shape of the grown crystal. Abstract : The shape of the silicon crystal, whether spiral or cylindrical, was grown using the infrared convergent-heating floating-zone method, and the stability of the molten zone depended on the position of the mirror-lamp (M-L) system with respect to the grown crystal and molten zone. Through experiment, we studied the changes in the molten zone shape: the melt/feed, melt/gas, and melt/crystal interface shapes of the silicon molten zone under different positions of the M-L system. Although conventional parameters such as convexities ( h / r ) of the interface toward the melt were found to be independent of the position of the M-L system, the asymmetry of the zone length, L, was found to be inversely proportional to the distance of the M-L system from the center of the molten zone. A spiral crystal would be grown in this case. We introduce some parameters such as growth interface angle ( δ ), triple point angle (TPA), meniscus angle (MA), and altitude of the interface curvature ( a C ) to characterize the axis symmetry of the melt/gas and melt/crystal interfaces. The variations in TPA, MA, and a C were significantly reduced when the M-L system was shifted to a distant position from the center of the molten zone. On the other hand, the variations in δ were independent of the position of the M-L system.Abstract : Axis symmetry of the silicon molten zone shape, which is dependent on the position of the mirror-lamp (M-L) system, is related to the shape of the grown crystal. Abstract : The shape of the silicon crystal, whether spiral or cylindrical, was grown using the infrared convergent-heating floating-zone method, and the stability of the molten zone depended on the position of the mirror-lamp (M-L) system with respect to the grown crystal and molten zone. Through experiment, we studied the changes in the molten zone shape: the melt/feed, melt/gas, and melt/crystal interface shapes of the silicon molten zone under different positions of the M-L system. Although conventional parameters such as convexities ( h / r ) of the interface toward the melt were found to be independent of the position of the M-L system, the asymmetry of the zone length, L, was found to be inversely proportional to the distance of the M-L system from the center of the molten zone. A spiral crystal would be grown in this case. We introduce some parameters such as growth interface angle ( δ ), triple point angle (TPA), meniscus angle (MA), and altitude of the interface curvature ( a C ) to characterize the axis symmetry of the melt/gas and melt/crystal interfaces. The variations in TPA, MA, and a C were significantly reduced when the M-L system was shifted to a distant position from the center of the molten zone. On the other hand, the variations in δ were independent of the position of the M-L system. Thus, a symmetric molten zone was observed when the M-L system was at a distant rather than a close position. These behaviors were validated through observations of the molten zone stability and the crystal shape. … (more)
- Is Part Of:
- CrystEngComm. Volume 17:Issue 48(2015)
- Journal:
- CrystEngComm
- Issue:
- Volume 17:Issue 48(2015)
- Issue Display:
- Volume 17, Issue 48 (2015)
- Year:
- 2015
- Volume:
- 17
- Issue:
- 48
- Issue Sort Value:
- 2015-0017-0048-0000
- Page Start:
- 9452
- Page End:
- 9458
- Publication Date:
- 2015-11-23
- Subjects:
- Crystals -- Periodicals
Crystal growth -- Periodicals
Crystallography -- Periodicals
Cristaux -- Périodiques
Cristaux -- Croissance -- Périodiques
Cristallographie -- Périodiques
548 - Journal URLs:
- http://pubs.rsc.org/en/journals/journalissues/ce#!issueid=ce016040&type=current ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c5ce01685a ↗
- Languages:
- English
- ISSNs:
- 1466-8033
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 3490.168000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 1844.xml