Improved crosstalk noise modeling of MWCNT interconnects using FDTD technique. Issue 12 (December 2015)

• Record Type: Journal Article
• Authors: Kumar, Vobulapuram Ramesh; Kumar Kaushik, Brajesh; Patnaik, Amalendu
• Is Part Of: Microelectronics journal. Volume 46:Issue 12 Part A (2015)
• Page Start: 1263
• Page End: 1268
• Publication Date: 2015-12
• Subjects: FDTD -- CMOS -- Multiwall CNT -- Crosstalk; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2015.10.009
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: This paper presents a crosstalk noise model of CMOS gate-driven coupled multi-walled carbon nanotube (MWCNT) interconnects based on finite-difference time-domain (FDTD) technique. The analysis is based on the transmission line model of MWCNT interconnect and modified alpha power law model of CMOS driver. It is observed that the results of proposed model closely match with that of HSPICE simulations and at the same time the model is more time efficient than the HSPICE. Moreover, it is observed that the conventional models are not useful for accurate estimation of crosstalk induced performance parameters. Highlights: Crosstalk noise model is presented for CMOS-gate driven MWCNT interconnects using FDTD. CMOS driver is modeled by modified alpha power law model. The proposed model is validated with industry standard HSPICE simulations. The average error while estimating the noise peak voltage is less than 2%. The proposed model can be incorporated in CAD simulation tools.