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HARVARD Citation
Lin, S. et al. (2015). Study of radiation hardness of HfO2-based resistive switching memory at nanoscale by conductive atomic force microscopy. Microelectronics and reliability. 55 (11), pp. 2224-2228. [Online].
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Lin, S. et al. (2015). Study of radiation hardness of HfO2-based resistive switching memory at nanoscale by conductive atomic force microscopy. Microelectronics and reliability. 55 (11), pp. 2224-2228. [Online].