Elastic Relaxation of Strained Silicon on Insulator (sSOI) Fins: Nanobeam Diffraction (NBD) and Simulations. (23rd September 2015)

Record Type:: Journal Article
Title:: Elastic Relaxation of Strained Silicon on Insulator (sSOI) Fins: Nanobeam Diffraction (NBD) and Simulations. (23rd September 2015)
Main Title:: Elastic Relaxation of Strained Silicon on Insulator (sSOI) Fins: Nanobeam Diffraction (NBD) and Simulations
Authors:: Li, J.
Morin, Pierre
Liu, Q.
Cheng, K.
Loubet, N.
Doris, B.
Gaudiello, J.
Abstract:
Is Part Of:: Microscopy and microanalysis. Volume 21(2015:Jun.)Supplement 3
Journal:: Microscopy and microanalysis
Issue:: Volume 21(2015:Jun.)Supplement 3
Issue Display:: Volume 21, Issue 3 (2015)
Year:: 2015
Volume:: 21
Issue:: 3
Issue Sort Value:: 2015-0021-0003-0000
Page Start:: 1967
Page End:: 1968
Publication Date:: 2015-09-23
Subjects:: Microscopy -- Periodicals
Microchemistry -- Periodicals
502.82
Journal URLs:: https://academic.oup.com/mam ↗
http://journals.cambridge.org/action/displayJournal?jid=MAM ↗
http://link.springer.de/link/service/journals/10005/index.htm ↗
http://firstsearch.oclc.org ↗
DOI:: 10.1017/S1431927615010612 ↗
Languages:: English
ISSNs:: 1431-9276
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library HMNTS - ELD Digital store
Ingest File:: 545.xml