Incompletely condensed POSS-based spin-on-glass networks for impeccable ultra low-k integration. Issue 44 (19th October 2015)

• Record Type: Journal Article
• Authors: Lee, Albert S.; Choi, Seung-Sock; Oh, Sung Yeoun; Lee, He Seung; Kim, Bomin; Hwang, Seung Sang; Baek, Kyung-Youl
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 44(2015)
• Page Start: 11605
• Page End: 11611
• Publication Date: 2015-10-19
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5tc02683k
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : The integration reliability of mechanically robust, ultra low- k spin-on-glass poly(methyl)silsesquioxanes incorporating incompletely condensed methyl-POSS were examined for next generation microelectronics. Abstract : Poly(methyl)silsesquioxane-based spin-on-glass resins incorporating both a cyclic precursor, 1, 3, 5, 7-tetramethyl 1, 3, 5, 7-tetrahydroxyl cyclosiloxane, and incompletely condensed methyl-substituted POSS were synthesized and their thermal, mechanical, and electrical properties were investigated as a function of the POSS loading content. By introducing incompletely condensed methyl-substituted POSS compounds at the molecular level as sol–gel precursors, exceptional thermal stability (>700 °C), good mechanical properties (elastic modulus >4.0 GPa), and an ultra-low dielectric constant ( k = 1.8) were obtained. In addition to providing a new route towards fully poly(methyl)silsesquioxane-based spin-on-glass resins with the above properties, the realization of the application of integration circuits was evaluated to show that the ultra low- k, mechanically robust spin-on-glass materials were able to withstand harsh wet chemical and dry etching, as well as chemical mechanical planarization (CMP) processing.