Resistive switching in Ga- and Sb-doped ZnO single nanowire devices. Issue 45 (29th October 2015)

• Record Type: Journal Article
• Authors: Wang, Bo; Ren, Tianshuang; Chen, Si; Zhang, Bosen; Zhang, Rongfang; Qi, Jing; Chu, Sheng; Huang, Jian; Liu, Jianlin
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 45(2015)
• Page Start: 11881
• Page End: 11885
• Publication Date: 2015-10-29
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5tc02102b
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Self-rectifying resistive switching is demonstrated in Ga-doped ZnO single nanowire device. The current is not only self-rectifying but also self-compliance for Sb-doped single nanowire devices in which multilevel resistive switching has also been achieved by using different SET voltages. Abstract : Resistive random access memory (RRAM) is one of the most promising nonvolatile memory technologies because of its high potential to replace traditional charge-based memory, which is approaching its scaling limit. To fully realize the potential of the RRAM, it can be important to develop a unique device with current self-rectification, which provides a solution to suppress sneak current in crossbar arrays, and self-compliance, which eliminates the current limiter. In this paper, self-rectifying resistive switching is demonstrated in Ga-doped ZnO single nanowire devices; the current is not only self-rectifying but also self-compliance for Sb-doped single nanowire devices. Multilevel resistive switching has also been achieved for Sb-doped ZnO single nanowire devices by using different SET voltages. Furthermore, the doping of Ga and Sb narrows the switching voltage distribution greatly.