Microfluidic alignment and trapping of 1D nanostructures – a simple fabrication route for single-nanowire field effect transistors. Issue 115 (4th November 2015)

• Record Type: Journal Article
• Authors: Gang, A.; Haustein, N.; Baraban, L.; Weber, W.; Mikolajick, T.; Thiele, J.; Cuniberti, G.
• Is Part Of: RSC advances. Volume 5:Issue 115(2015)
• Page Start: 94702
• Page End: 94706
• Publication Date: 2015-11-04
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c5ra20414c
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : Microfluidic trapping of 1D nanostructures at predefined positions for subsequent facile contacting via UV-lithography. Abstract : We present a simple method to microfluidically align and trap 1D nanostructures from suspension at well-defined positions on a receiver substrate for the fabrication of single-nanowire field effect transistors (NW FETs). Our approach allows for subsequent contacting of deposited NWs via standard UV-lithography. We demonstrate that silicon as well as copper(ii ) oxide NWs can be processed, and that up to 13 out of 32 designated trapping sites are occupied with single-NW FETs.