Probing individual point defects in graphene via near-field Raman scattering. Issue 46 (5th November 2015)

• Record Type: Journal Article
• Authors: Mignuzzi, Sandro; Kumar, Naresh; Brennan, Barry; Gilmore, Ian S.; Richards, David; Pollard, Andrew J.; Roy, Debdulal
• Is Part Of: Nanoscale. Volume 7:Issue 46(2015)
• Page Start: 19413
• Page End: 19418
• Publication Date: 2015-11-05
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr04664e
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : We demonstrate the capability of tip-enhanced Raman spectroscopy to probe individual point defects in graphene. Abstract : The Raman scattering D-peak in graphene is spatially localised in close proximity to defects. Here, we demonstrate the capability of tip-enhanced Raman spectroscopy (TERS) to probe individual point defects, even for a graphene layer with an extremely low defect density. This is of practical interest for future graphene electronic devices. The measured TERS spectra enable a direct determination of the average inter-defect distance within the graphene sheet. Analysis of the TERS enhancement factor of the graphene Raman peaks highlights the preferential enhancement and symmetry-dependent selectivity of the D-peak intensity caused by zero-dimensional Raman scatterers.