Antisite defects in layered multiferroic CuCr0.9In0.1P2S6. Issue 44 (22nd October 2015)

• Record Type: Journal Article
• Authors: He, Qian; Belianinov, Alex; Dziaugys, Andrius; Maksymovych, Petro; Vysochanskii, Yulian; Kalinin, Sergei V.; Borisevich, Albina Y.
• Is Part Of: Nanoscale. Volume 7:Issue 44(2015)
• Page Start: 18579
• Page End: 18583
• Publication Date: 2015-10-22
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr04779j
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : CuCr1− x In x P2 S6 compounds are promising candidates for 2D materials with additional functionalities such as ferroelectricity. Quantitative STEM-HAADF studies found that in addition to isovalently replacing Cr 3+, In 3+ dopants can also occupy Cu + sites, forming antisite defects. Abstract : The CuCr1− x In x P2 S6 system represents a large family of metal chalcogenophosphates that are unique and promising candidates for 2D materials with functionalities such as ferroelectricity. In this work, we carried out detailed microstructural and chemical characterization of these compounds using aberration-corrected STEM, in order to understand the origin of these different ordering phenomena. Quantitative STEM-HAADF imaging and analysis identified the stacking order of an 8-layer thin flake, which leads to the identification of anti-site In 3+ (Cu + ) doping. We believe that these findings will pave the way towards understanding the ferroic coupling phenomena in van der Waals lamellar compounds, as well as their potential applications in 2-D electronics.