Anisotropic photocurrent response at black phosphorus–MoS2 p–n heterojunctions. Issue 44 (22nd October 2015)

• Record Type: Journal Article
• Authors: Hong, Tu; Chamlagain, Bhim; Wang, Tianjiao; Chuang, Hsun-Jen; Zhou, Zhixian; Xu, Ya-Qiong
• Is Part Of: Nanoscale. Volume 7:Issue 44(2015)
• Page Start: 18537
• Page End: 18541
• Publication Date: 2015-10-22
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr03400k
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : We investigate the photocurrent generation mechanisms at a vertical p–n heterojunction between black phosphorus (BP) and molybdenum disulfide (MoS2 ) flakes through polarization-, wavelength-, and gate-dependent scanning photocurrent measurements. Abstract : We investigate the photocurrent generation mechanisms at a vertical p–n heterojunction between black phosphorus (BP) and molybdenum disulfide (MoS2 ) flakes through polarization-, wavelength-, and gate-dependent scanning photocurrent measurements. When incident photon energy is above the direct band gap of MoS2, the photocurrent response demonstrates a competitive effect between MoS2 and BP in the junction region. In contrast, if the incident photon energy is below the band gap of MoS2 but above the band gap of BP, the photocurrent response at the p–n junction exhibits the same polarization dependence as that at the BP–metal junction, which is nearly parallel to the MoS2 channel. This result indicates that the photocurrent signals at the MoS2 –BP junction primarily result from the direct band gap transition in BP. These fundamental studies shed light on the knowledge of photocurrent generation mechanisms in vertical 2D semiconductor heterojunctions, offering a new way of engineering future two-dimensional materials based optoelectronic devices.