A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2. Issue 40 (28th September 2015)

• Record Type: Journal Article
• Authors: Song, Xiang-Xiang; Liu, Di; Mosallanejad, Vahid; You, Jie; Han, Tian-Yi; Chen, Dian-Teng; Li, Hai-Ou; Cao, Gang; Xiao, Ming; Guo, Guang-Can; Guo, Guo-Ping
• Is Part Of: Nanoscale. Volume 7:Issue 40(2015)
• Page Start: 16867
• Page End: 16873
• Publication Date: 2015-09-28
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr04961j
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : A gate defined quantum dot is demonstrated on few-layer WSe2 . Abstract : Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Herein, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, therefore eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on a way to obtain smaller quantum dots on TMDCs with the same top gate geometry compared to traditional GaAs/AlGaAs heterostructures with further research.