Cite
HARVARD Citation
Yi, Y. et al. (2015). A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy. Nanoscale. 7 (38), pp. 15711-15718. [Online].
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Yi, Y. et al. (2015). A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy. Nanoscale. 7 (38), pp. 15711-15718. [Online].