Designing the shape evolution of SnSe2 nanosheets and their optoelectronic properties. Issue 41 (1st October 2015)

• Record Type: Journal Article
• Authors: Huang, Yun; Xu, Kai; Wang, Zhenxing; Shifa, Tofik Ahmed; Wang, Qisheng; Wang, Feng; Jiang, Chao; He, Jun
• Is Part Of: Nanoscale. Volume 7:Issue 41(2015)
• Page Start: 17375
• Page End: 17380
• Publication Date: 2015-10-01
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr05989e
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : A facile CVD method to synthesize square SnSe nanosheets and hexagonal, truncated triangular, and triangular SnSe2 nanosheets. Abstract : Layered chalcogenide materials (LCMs) are emerging materials in recent years for their great potential in applications of electronics and optoelectronics. As a member of LCMs, SnSe2, an n-type semiconductor with a band gap of ∼1.0 eV, is of great value to explore. In this paper, we develop a facile CVD method, for the first time, to synthesize diverse shaped SnSe2 and square SnSe nanosheets (NSs) on SiO2 /Si substrates. To the best of our knowledge, the thickness of as-grown SnSe2 is among the thinnest ones synthesized by CVD methods on various substrates. What's more, photodetectors are fabricated to investigate the optoelectronic properties of SnSe2 . The on/off ratio of photoswitches reaches 100 under the illumination of an 800 nm laser. This work will pave a new pathway to synthesize LCM nanostructures, shed light on the shape evolution during the growth process and expand the candidates for high performance optoelectronic devices.