Cite
HARVARD Citation
Zhao, C. et al. (2015). An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination. Nanoscale. 7 (40), pp. 16658-16665. [Online].
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Zhao, C. et al. (2015). An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination. Nanoscale. 7 (40), pp. 16658-16665. [Online].