Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors. Issue 46 (9th November 2015)

• Record Type: Journal Article
• Authors: Althagafi, Talal M.; Algarni, Saud A.; Al Naim, Abdullah; Mazher, Javed; Grell, Martin
• Is Part Of: Physical chemistry chemical physics. Volume 17:Issue 46(2015)
• Page Start: 31247
• Page End: 31252
• Publication Date: 2015-11-09
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c5cp03326h
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : We significantly improved the performance of precursor-route semiconducting zinc oxide (ZnO) films in electrolyte-gated thin film transistors (TFTs). Abstract : We significantly improved the performance of precursor-route semiconducting zinc oxide (ZnO) films in electrolyte-gated thin film transistors (TFTs). We find that the organic precursor to ZnO, zinc acetate (ZnAc), dissolves more readily in a 1 : 1 mixture of ethanol (EtOH) and acetone than in pure EtOH, pure acetone, or pure isopropanol. XPS and SEM characterisation show improved morphology of ZnO films converted from a mixed solvent cast ZnAc precursor compared to the EtOH cast precursor. When gated with a biocompatible electrolyte, phosphate buffered saline (PBS), ZnO thin film transistors (TFTs) derived from mixed solvent cast ZnAc give 4 times larger field effect current than similar films derived from ZnAc cast from pure EtOH. The sheet resistance at V G = V D = 1 V is 30 kΩ □ −1, lower than for any organic TFT, and lower than for any electrolyte-gated ZnO TFT reported to date.