Epitaxial growth and thermoelectric properties of c-axis oriented Bi1−xPbxCuSeO single crystalline thin films. Issue 45 (28th October 2015)

• Record Type: Journal Article
• Authors: Wu, Xiaolin; Wang, Jiang-Long; Zhang, Hongrui; Wang, Shufang; Zhai, Shengjun; Li, Yaguang; Elhadj, Dogheche; Fu, Guangsheng
• Is Part Of: CrystEngComm. Volume 17:Issue 45(2015)
• Page Start: 8697
• Page End: 8702
• Publication Date: 2015-10-28
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c5ce01701g
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : Enhanced thermoelectric performance of c -axis oriented Bi1− x Pb x CuSeO single crystalline thin films. Abstract : c -axis oriented Bi1− x Pb x CuSeO (0 ≤ x ≤ 0.8) single crystalline thin films have been successfully epitaxially grown on SrTiO3 (001) substrates via the pulsed laser deposition technique. Detailed X-ray diffraction and transmission electron microscopy measurements reveal the excellent c -axis and ab -plane texture of the films. As the Pb doping concentration increases, both the resistivity and the Seebeck coefficient decrease due to the increase in hole carrier concentration. The highest power factor of about 1.2 mW m −1 K −2 has been achieved in Bi0.96 Pb0.06 CuSeO single crystalline thin films at 673 K, which is much higher than those of polycrystalline ceramics with random orientation, suggesting that c -axis oriented BiCuSeO-based single crystalline thin films might have great potential for application in thermoelectric thin film devices.