Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers. Issue 92 (30th September 2015)

• Record Type: Journal Article
• Authors: Wirtz, Christian; Hallam, Toby; Cullen, Conor Patrick; Berner, Nina C.; O'Brien, Maria; Marcia, Mario; Hirsch, Andreas; Duesberg, Georg S.
• Is Part Of: Chemical communications. Volume 51:Issue 92(2015)
• Page Start: 16553
• Page End: 16556
• Publication Date: 2015-09-30
• Subjects: Chemistry -- Periodicals; 540
• DOI: 10.1039/c5cc05726d
• Languages: English
• ISSNs: 1359-7345

Abstract

Abstract : Atomic layer deposition of Al2 O3 on layered transition metal chalcogenides was found to depend on the number of layers involved, with the monolayer least reactive. This process can be seeded to ensure full coverage. Abstract : This commmunication presents a study of atomic layer deposition of Al2 O3 on transition metal dichalcogenide (TMD) two-dimensional films which is crucial for use of these promising materials for electronic applications. Deposition of Al2 O3 on pristine chemical vapour deposited MoS2 and WS2 crystals is demonstrated. This deposition is dependent on the number of TMD layers as there is no deposition on pristine monolayers. In addition, we show that it is possible to reliably seed the deposition, even on the monolayer, using non-covalent functionalisation with perylene derivatives as anchor unit.