Study of NdAlO3 Dielectric Thin Films by Sol-Gel Method. Issue 1 (26th January 2016)

• Record Type: Journal Article
• Authors: Tseng, Ching-Fang; Lin, Po-An; Wei, Tzu-Chun
• Is Part Of: Ferroelectrics. Volume 491:Issue 1(2016)
• Page Start: 112
• Page End: 117
• Publication Date: 2016-01-26
• Subjects: Keywords Sol-gel method -- electrical properties -- microstructure -- NdAlO3 thin films; Ferroelectricity -- Periodicals; Ferroelectric crystals -- Periodicals; 537
• DOI: 10.1080/00150193.2015.1071133
• Languages: English
• ISSNs: 0015-0193

Abstract

Abstract : Electrical properties and microstructure of NdAlO3 thin films prepared by sol-gel method on Si substrates at different preheating temperatures have been investigated. The structure of the materials is studied using X-ray diffraction, and the microstructure is analyzed using scanning electron microscopy. The diffraction pattern showed that the deposited films exhibited an amorphous microstructure. The dependence of the physical and electrical characteristics on various preheating temperatures was also investigated. At an preheating temperature of 400°C, the NdAlO3 films with 65 nm thickness possess an leakage current density of 9.5×10 −7 A/cm 2 at an electrical field of 10 kV/cm.