A novel two-dimensional material B2S3 and its structural implication to new carbon and boron nitride allotropes. Issue 38 (8th September 2015)
- Record Type:
- Journal Article
- Title:
- A novel two-dimensional material B2S3 and its structural implication to new carbon and boron nitride allotropes. Issue 38 (8th September 2015)
- Main Title:
- A novel two-dimensional material B2S3 and its structural implication to new carbon and boron nitride allotropes
- Authors:
- Liu, Wei
Miao, Maosheng
Liu, Jing-yao - Abstract:
- Abstract : We propose a single layer of B2 S3 as a new potential 2D material, conceived directly from its existing layered 3D crystal. New 2D BN and graphene allotropes are constructed from B2 S3 . Abstract : Two-dimensional (2D) semiconductor materials and the fabrication of related devices have become a new focus of electronics and materials science recently. Compared with three-dimensional (3D) semiconductors, the choice of 2D materials is very limited. Recently, the emerging goal of fabricating functional heterojunctions of 2D semiconductors has spurred a strong need to search for 2D materials that have a large variety of band gaps and band edges. Here, we propose a single layer of B2 S3 as a new potential 2D material, conceived directly from its existing layered 3D crystal. Using an advanced hybrid functional method, we demonstrated that 2D B2 S3 has a gap of 3.75 eV, filling a missing energy range for 2D materials. Furthermore, by adding extra B atoms at the 'vacancy' sites of the B2 S3 structure to give a 1 : 1 stoichiometry, we constructed new 2D BN and graphene allotropes that show large variation in the electronic structure. The BN allotrope exhibits a gap that is 0.99 eV lower than h-BN. Although the structure is significantly different to graphene, the new C allotrope contains a Dirac cone. However, the Dirac point is slightly lower than the Fermi level because of the electron transfer from an adjacent valence band to the Dirac cone states, resulting in aAbstract : We propose a single layer of B2 S3 as a new potential 2D material, conceived directly from its existing layered 3D crystal. New 2D BN and graphene allotropes are constructed from B2 S3 . Abstract : Two-dimensional (2D) semiconductor materials and the fabrication of related devices have become a new focus of electronics and materials science recently. Compared with three-dimensional (3D) semiconductors, the choice of 2D materials is very limited. Recently, the emerging goal of fabricating functional heterojunctions of 2D semiconductors has spurred a strong need to search for 2D materials that have a large variety of band gaps and band edges. Here, we propose a single layer of B2 S3 as a new potential 2D material, conceived directly from its existing layered 3D crystal. Using an advanced hybrid functional method, we demonstrated that 2D B2 S3 has a gap of 3.75 eV, filling a missing energy range for 2D materials. Furthermore, by adding extra B atoms at the 'vacancy' sites of the B2 S3 structure to give a 1 : 1 stoichiometry, we constructed new 2D BN and graphene allotropes that show large variation in the electronic structure. The BN allotrope exhibits a gap that is 0.99 eV lower than h-BN. Although the structure is significantly different to graphene, the new C allotrope contains a Dirac cone. However, the Dirac point is slightly lower than the Fermi level because of the electron transfer from an adjacent valence band to the Dirac cone states, resulting in a metallic state with both 'massless' electrons and massive holes. … (more)
- Is Part Of:
- Journal of materials chemistry. Volume 3:Issue 38(2015)
- Journal:
- Journal of materials chemistry
- Issue:
- Volume 3:Issue 38(2015)
- Issue Display:
- Volume 3, Issue 38 (2015)
- Year:
- 2015
- Volume:
- 3
- Issue:
- 38
- Issue Sort Value:
- 2015-0003-0038-0000
- Page Start:
- 9921
- Page End:
- 9927
- Publication Date:
- 2015-09-08
- Subjects:
- Materials -- Periodicals
Chemistry, Analytic -- Periodicals
Optical materials -- Research -- Periodicals
Electronics -- Materials -- Research -- Periodicals
543.0284 - Journal URLs:
- http://pubs.rsc.org/en/journals/journalissues/tc# ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c5tc01079a ↗
- Languages:
- English
- ISSNs:
- 2050-7526
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5012.205300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 18.xml