Low‐current operation of novel Gd2O3‐based RRAM cells with large memory window. Issue 2 (8th September 2015)

• Record Type: Journal Article
• Authors: Chen, Chao Yang; Goux, Ludovic; Fantini, Andrea; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Malgorzata
• Is Part Of: Physica status solidi. Volume 213:Issue 2(2016:Feb.)
• Page Start: 320
• Page End: 324
• Publication Date: 2015-09-08
• Subjects: endurance -- Gd2O3 -- low currents -- oxide‐based resistive memory -- retention; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201532377
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : In this paper, we introduce rare‐earth hygroscopic oxide Gd2 O3 as a novel switching material allowing extended reset operation as compared to standard state‐of‐the‐art oxide like (Hf, Al)O2 . We prepared 5 nm‐thick oxide layers, as integrated between TiN and Hf electrodes in 1‐transistor/1‐resistor configuration. Using industry‐relevant programming current I ≤ 10 µA and pulse width ≤1 µs, 40 nm‐size TiN\Gd2 O3 \Hf cells allowed reaching a median memory window (MW) > × 70 while state‐of‐the‐art materials exhibited MW < × 10 in the same conditions. Based on the large MW, high write endurance properties (>10 6 cycles), and good retention of Gd2 O3 ‐based cells (>5 days at 85 °C), verify algorithms allow reliable programming with low latency.