Camera‐based high frequency heterodyne lock‐in carrierographic (frequency‐domain photoluminescence) imaging of crystalline silicon wafers. Issue 2 (10th November 2015)

• Record Type: Journal Article
• Authors: Sun, Qiming; Melnikov, Alexander; Mandelis, Andreas
• Is Part Of: Physica status solidi. Volume 213:Issue 2(2016:Feb.)
• Page Start: 405
• Page End: 411
• Publication Date: 2015-11-10
• Subjects: cameras -- carrierography -- heterodyne -- imaging -- photoluminescence -- silicon wafers; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201532033
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : A heterodyne lock‐in imaging scheme is introduced to overcome NIR camera speed limitations and poor signal‐to‐noise ratios, thereby generating high‐frequency carrierographic imaging up to 10 kHz. A theoretical model was established to investigate the heterodyne signal generation mechanism as well as to extract the major carrier transport parameters by best‐fitting the entire modulation frequency dependence. Good agreement was found between the theoretically predicted and experimentally measured heterodyne amplitude dependence on excitation intensity. A contrast inversion feature in the high‐frequency heterodyne amplitude images was observed. High‐frequency information presents a method for resolving local near‐surface carrier transport parameters from the lumped effective lifetime, thereby providing ac‐diffusion‐length‐controlled depth‐selective/resolved imaging. Heterodyne lock‐in carrierography (LIC) amplitude images of a crystalline silicon wafer at different frequencies.