TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire Devices1. Issue 2 (25th March 2015)

• Record Type: Journal Article
• Authors: Banerjee, Sayanti; Löffler, Markus; Muehle, Uwe; Berent, Katarzyna; Heinzig, André; Trommer, Jens; Weber, Walter; Zschech, Ehrenfried
• Is Part Of: Advanced engineering materials. Volume 18:Issue 2(2016:Feb.)
• Page Start: 180
• Page End: 184
• Publication Date: 2015-03-25
• Subjects: Materials -- Periodicals; 620.11
• DOI: 10.1002/adem.201400577
• Languages: English
• ISSNs: 1438-1656

Abstract

Abstract : The physical and electrical properties of a silicon nanowire reconfigurable field effect transistor (RFETs) are determined by the Schottky junction between the participating phases. TEM studies on such junctions require a careful FIB‐based target preparation of thin lamellae with minimal ion‐beam induced damage. In the current study, the nickel silicide phase forming the Schottky junction with silicon is identified using EDX in the TEM, considering a calibration based on the Fourier transforms of the HRTEM micrographs of known diffraction patterns of the nickel silicide phases. The TEM lamellae are prepared using the so‐called lift‐out technique and low voltage Ga + ion polishing to minimize the near‐surface amorphization. The structural and compositional data of the nickel silicide phase are needed for engineering the Schottky junction and corresponding theoretical modeling. Abstract : The nickel silicide phase forming the Schottky junction in a silicon nanowire device is identified and characterized using high resolution TEM and EDX line scan. The sample was prepared using a lift‐out process in FIB and corresponding low accelerating voltage ion milling. The EDX line scan data is provides a comprehensive idea about the structure of the Schottky junction, which is essential for the engineering and theoretical modeling of the said junction.