Cite
HARVARD Citation
Zhang, X. et al. (2015). Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique. CrystEngComm. 17 (39), pp. 7496-7499. [Online].
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Zhang, X. et al. (2015). Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique. CrystEngComm. 17 (39), pp. 7496-7499. [Online].