Photocurrent Response of Two ­Metal(II) Complexes Based on Rigid Ligands. Issue 3 (21st December 2015)

• Record Type: Journal Article
• Authors: Zhang, Pan; Gong, Yun; Lin, Jian‐Hua
• Is Part Of: European journal of inorganic chemistry. Issue 3(2016)
• Page Start: 322
• Page End: 329
• Publication Date: 2015-12-21
• Subjects: Redox chemistry -- Structure elucidation -- Polymers -- Optoelectronic properties; Chemistry, Inorganic -- Periodicals; Organometallic chemistry -- Periodicals; Bioinorganic chemistry -- Periodicals; Solid state chemistry -- Periodicals; 546
• DOI: 10.1002/ejic.201501114
• Languages: English
• ISSNs: 1434-1948

Abstract

Abstract: Two metal(II) complexes formulated as Cd3 L(L1)3 (H2 O) (1 ) and Zn3 L(BTC)2 (H2 O)· 7H2 O (2 ) {L = 4‐[4‐(1 H ‐imidazol‐1‐yl)phenyl]‐2, 6‐di(pyridin‐4‐yl)pyridine, H2 L1 = 2, 5‐bis(3′‐carboxylphenyl)pyridine, H3 BTC = 1, 3, 5‐benzenetricarboxylic acid} were synthesized and structurally characterized by single‐crystal X‐ray diffraction. Complex1 displays a two‐nodal (3, 7)‐connected 3D architecture with a novel (4.6 2 )(4 8 .6 10 .8 3 ) topology, in which a Cd3 unit with a Cd··· Cd separation of 3.5 Å is observed. Complex2 possesses two kinds of Zn2 units, and it shows a (3, 4, 7)‐connected 3D architecture with a novel (4.6 2 )6 (4 3 .6 6 .8 11 .10)2 (6 4 .8 2 ) topology. Complexes1 and2 both exhibit quasireversible redox properties, and a photocurrent could be produced on the two complexes upon visible‐light illumination (650 nm > λ > 350 nm). However, different photocurrent responses were observed on the two complexes, and complex1 yielded a photocurrent density that was higher than that of the bare Si wafer and complex2, probably because of different charge‐transfer impedances at the interfaces and charge‐carrier concentrations in the photoelectrodes. Abstract : Using rigid ligands, two metal(II) complexes are synthesized and different photocurrent responses are observed on the two complexes upon illumination (650 nm > λ > 350 nm). Complex1 yields a photocurrent density higher than that of the bare Si wafer and complex2, probably because of different charge‐transfer impedances at the interfaces and charge‐carrier concentrations in the photoelectrodes.