Complementary Unipolar WS2 Field‐Effect Transistors Using Fermi‐Level Depinning Layers. (15th December 2015)

• Record Type: Journal Article
• Authors: Park, Woojin; Kim, Yonghun; Jung, Ukjin; Yang, Jin Ho; Cho, Chunhum; Kim, Yun Ji; Hasan, Syed Mohammad Najib; Kim, Hyun Gu; Lee, Han Bo Ram; Lee, Byoung Hun
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 2(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-12-15
• Subjects: contact resistance -- Fermi‐level pinning -- field‐effect transistors -- interfacial layers -- WS2; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201500278
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : High contact resistance and symmetrical conduction are serious challenges in practical applications of transition metal dichalcogenide (TMD) field‐effect transistors (FETs). Unipolar behavior and reduced contact resistance are achieved for tungsten disulfide (WS2 ) FETs by using a TiO2 interfacial layer inserted between a metal layer and a WS2 layer.