Vapor‐Phase Deposited Ultrathin Polymer Gate Dielectrics for High‐Performance Organic Thin Film Transistors. (29th December 2015)

• Record Type: Journal Article
• Authors: Seong, Hyejeong; Pak, Kwanyong; Joo, Munkyu; Choi, Junhwan; Im, Sung Gap
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 2(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-12-29
• Subjects: initiated chemical vapor deposition (iCVD) -- organic thin‐film transistors (OTFTs) -- polymer dielectrics -- polymer thin films; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201500209
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : A series of new ultrathin polymer dielectric layers (sub‐40 nm) is synthesized via initiated chemical vapor deposition (iCVD) for application in low‐power, flexible organic thin‐film transistors (OTFTs): poly(ethylene glycol dimethacrylate) (pEGDMA), poly(isobornyl acrylate) (pIBA), and poly(1 H, 1 H, 2 H, 2 H ‐perfluorodecyl acrylate) (pPFDA). The iCVD process is a solvent‐free, vapor‐phase process to deposit various kinds of functional polymer films with a high purity. The iCVD polymer dielectric layers commonly exhibit low leakage current densities ( J i ) less than 10 −8 A cm −2 in the range of ±3 MV cm −1, high breakdown field ( E break ) over 4 MV cm −1, and excellent flexibility up to a tensile strain of 3.3%. Hysteresis‐free, low‐voltage OTFTs made of the iCVD dielectric layers are demonstrated with various kinds of n‐ and p‐type semiconductors. The superior performance of the iCVD dielectrics will enable the polymer films to play a pivotal role in developing various types of future organic electronic devices. Abstract : A series of new ultrathin polymer dielectric layers (sub‐40 nm) is synthesized via initiated chemical vapor deposition (iCVD) for application in low‐power, flexible organic thin film transistors (OTFTs). The dielectric layers commonly exhibit low leakage current densities, high breakdown field over 4 MV cm −1, and excellent flexibility up to a tensile strain of 3.3%. Hysteresis‐free, low‐voltage OTFTs made of the iCVD dielectric layers are also demonstrated with various kinds of n‐ and p‐type semiconductors.