Complementary Organic Logic Gates on Plastic Formed by Self‐Aligned Transistors with Gravure and Inkjet Printed Dielectric and Semiconductors. (7th January 2016)

• Record Type: Journal Article
• Authors: Higgins, Stuart G.; Muir, Beinn V. O.; Dell'Erba, Giorgio; Perinot, Andrea; Caironi, Mario; Campbell, Alasdair J.
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 2(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-01-07
• Subjects: inkjet printing -- nanoimprint lithography -- organic field‐effect transistor -- self‐alignment -- sub‐micrometer channel -- gravure printing; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201500272
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Complementary organic field‐effect transistors, inverters, NAND and NOR logic on plastic are demonstrated using a combination of nanoimprint lithography, self‐alignment, gravure, and inkjet printing. Sub‐micrometer channel lengths, electrode overlaps and sub‐100 nm dielectrics are compared to photolithographically patterned equivalents, as are inkjet and gravure printed semiconductors.