Photo‐generated Carrier Dynamics in the Vicinity of the Donor/Acceptor Interface of Organic Solar Cells. Issue 8 (10th July 2013)

• Record Type: Journal Article
• Authors: Ryuzaki, Sou; Onoe, Jun
• Is Part Of: Electronics and communications in Japan. Volume 96:Issue 8(2013:Aug.)
• Page Start: 1
• Page End: 8
• Publication Date: 2013-07-10
• Subjects: organic solar cells -- impedance spectroscopy -- built‐in potential -- open‐circuit voltage; Electronics -- Periodicals; Telecommunication -- Periodicals; 621.6805
• DOI: 10.1002/ecj.11542
• Languages: English
• ISSNs: 1942-9533

Abstract

SUMMARY: Change in electronic states before and after photo‐irradiation at a Donor/Acceptor (D/A) interface in organic solar cells consisting of zinc‐porphyrin and fullerene films has been examined using in situ impedance spectroscopy (IS), which makes it possible to non‐destructively measure a built‐in potential ( V bi ) of both D and A films at the D/A interface. The accumulation of photo‐generated carriers in the vicinity of the D/A interface was found to increase the V bi of both D [Zn(OEP)] and A [C60 ] films at the interface. In addition, it was noted that the sum of V bi obtained on photo‐irradiation was in good agreement with the open‐circuit voltage ( V OC ), of which the origin is still unsolved for organic solar cells. Thus, the charge accumulation of photo‐generated carriers in the vicinity of the D/A interface plays a key role in determining V OC . © 2013 Wiley Periodicals, Inc. Electron Comm Jpn, 96(8): 1–8, 2013; Published online in Wiley Online Library (wileyonlinelibrary.com ). DOI 10.1002/ecj.11542