Optimization of Electronic Domain‐Wall Properties by Aliovalent Cation Substitution. (8th December 2015)

• Record Type: Journal Article
• Authors: Schaab, Jakob; Cano, Andres; Lilienblum, Martin; Yan, Zewu; Bourret, Edith; Ramesh, Ramamoorthy; Fiebig, Manfred; Meier, Dennis
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 1(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-12-08
• Subjects: conductive atomic force microscopy -- electrostatic force microscopy -- ferroelectrics -- functional domain walls -- multiferroics; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201500195
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Electronic domain‐wall conductance is controlled by chemical aliovalent doping in the p‐type semiconductor Er1‐ x Ca x MnO3 . Coexisting bound (top panel) and mobile (lower panel) charges at the walls are analyzed using electrostatic force micro­scopy. Emergent doping‐related variations are quantified by local transport measurements and explained based on phenomenological theories.