Optoelectronic properties of OLEDs based on CdSe/ZnS quantum dots and F8BT. Issue 12 (29th October 2015)

• Record Type: Journal Article
• Authors: Borriello, C.; Prontera, C. T.; Mansour, Sh. A.; Aprano, S.; Maglione, M. G.; Bruno, A.; Luccio, T. Di; Minarini, C.
• Is Part Of: Physica status solidi. Volume 12:Issue 12(2015:Dec.)
• Page Start: 1416
• Page End: 1420
• Publication Date: 2015-10-29
• Subjects: quantum dots -- F8BT -- optoelectronic properties -- OLEDs; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201510162
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: We report our work about OLED devices where the emissive layer is based on CdSe/ZnS quantum dots (QDs) combined with poly[(9, 9‐di‐n‐octylfluorenyl‐2, 7‐diyl)‐alt‐(benzo[2, 1, 3]thiadiazol‐4, 8‐diyl)] (F8BT) in two different ways: blends at various QDs concentrations and sequential deposition of QDs and F8BT layers. The fluorescence of the blends presents a wide emission in the range (500‐700) nm due to the combination of fluorescence by the polymer (maximum at 540 nm) and QDs (maximum at 634 nm). Among the layered structures, the fluorescence emission by the QDs substantially contributes to the spectrum only for the F8BT/QDs bilayer. The OLEDs devices realized with the blend at 15 wt% of QDs show the highest luminance respect to all the devices, and threshold voltage values similar to the neat polymer device. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)