Trilayer Tunnel Selectors for Memristor Memory Cells. Issue 2 (19th November 2015)

• Record Type: Journal Article
• Authors: Choi, Byung Joon; Zhang, Jiaming; Norris, Kate; Gibson, Gary; Kim, Kyung Min; Jackson, Warren; Zhang, Min‐Xian Max; Li, Zhiyong; Yang, J. Joshua; Williams, R. Stanley
• Is Part Of: Advanced materials. Volume 28:Issue 2(2016)
• Page Start: 356
• Page End: 362
• Publication Date: 2015-11-19
• Subjects: memory cells -- memristor -- crested barriers -- tunneling -- RRAM; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201503604
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : An integrated memory cell with a mem­ristor and a trilayer crested barrier selector, showing repeatable nonlinear current–voltage switching loops is presented. The fully atomic‐layer‐deposited TaN1+x /Ta2 O5 /TaN1+x crested barrier selector yields a large nonlinearity (>10 4 ), high endurance (>10 8 ), low variability, and low temperature dependence.