Ambipolar Organic Tri‐Gate Transistor for Low‐Power Complementary Electronics. Issue 2 (17th November 2015)

• Record Type: Journal Article
• Authors: Torricelli, Fabrizio; Ghittorelli, Matteo; Smits, Edsger C. P.; Roelofs, Christian W. S.; Janssen, René A. J.; Gelinck, Gerwin H.; Kovács‐Vajna, Zsolt M.; Cantatore, Eugenio
• Is Part Of: Advanced materials. Volume 28:Issue 2(2016)
• Page Start: 284
• Page End: 290
• Publication Date: 2015-11-17
• Subjects: polymer transistors -- ambipolar semiconductors -- complementary electronics, electronic memory; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201503414
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Ambipolar transistors typically suffer from large off‐current inherently due to ambipolar conduction. Using a tri‐gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 10 5 are obtained. This enables easy integration into low‐power complementary logic and volatile electronic memories.