Cite
HARVARD Citation
Regoutz, A. et al. (2016). Role and Optimization of the Active Oxide Layer in TiO2‐Based RRAM. Advanced functional materials. pp. 507-513. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Regoutz, A. et al. (2016). Role and Optimization of the Active Oxide Layer in TiO2‐Based RRAM. Advanced functional materials. pp. 507-513. [Online].