Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening. Issue 3 (25th November 2015)

• Record Type: Journal Article
• Authors: Yu, Zhihao; Ong, Zhun‐Yong; Pan, Yiming; Cui, Yang; Xin, Run; Shi, Yi; Wang, Baigeng; Wu, Yun; Chen, Tangsheng; Zhang, Yong‐Wei; Zhang, Gang; Wang, Xinran
• Is Part Of: Advanced materials. Volume 28:Issue 3(2016)
• Page Start: 547
• Page End: 552
• Publication Date: 2015-11-25
• Subjects: interface -- mobility -- molybdenum disulfide (MoS2) -- phonon transport; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201503033
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : By combining a high‐ κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room‐temperature mobility of ≈150 cm 2 V −1 s −1 and room‐temperature phonon‐limited transport in a monolayer MoS2 transistor for the first time.