Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016). Issue 3 (14th January 2016)

• Record Type: Journal Article
• Authors: Yu, Zhihao; Ong, Zhun‐Yong; Pan, Yiming; Cui, Yang; Xin, Run; Shi, Yi; Wang, Baigeng; Wu, Yun; Chen, Tangsheng; Zhang, Yong‐Wei; Zhang, Gang; Wang, Xinran
• Is Part Of: Advanced materials. Volume 28:Issue 3(2016)
• Page Start: 546
• Page End: 546
• Publication Date: 2016-01-14
• Subjects: interface -- mobility -- molybdenum disulfide (MoS2) -- phonon transport; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201670019
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : On page 547, charged impurities in monolayer MoS2 are effectively screened by combining a high‐κ dielectric substrate and a high density of carriers, leading to an unprecedented room‐temperature electron mobility of ≈150 cm 2 V −1 s −1 . Y. Shi, G. Zhang, X. Wang and co‐workers also demonstrate phonon‐limited transport in monolayer MoS2 for the first time, an important milestone for electronic device applications.