AgSb(SxSe1‐x)2 thin films by rapid thermal processing of Sb2S3‐Ag‐Se thin films for photovoltaic applications. Issue 1 (26th November 2015)

• Record Type: Journal Article
• Authors: Rodriguez Vela, Dorian Leonardo; Krishnan, Bindu; Aguilar Martinez, Josue Amilcar; Loredo, Shadai Lugo; Shaji, Sadasivan
• Is Part Of: Physica status solidi. Volume 13:Issue 1(2016:Jan.)
• Page Start: 47
• Page End: 52
• Publication Date: 2015-11-26
• Subjects: Sb2S3thin films -- photovoltaics -- AgSb(SxSe1‐x)2, rapid thermal processing -- XRD; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201510117
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: Silver antimony sulfoselenide thin films have been investigated for photovoltaic applications. In the present work, we report preparation of AgSb(Sx Se1‐x )2 by a rapid thermal processing of pre‐annealed Sb2 S3 /Ag/Se/Ag/Se layered structures. Sb2 S3 thin films were deposited by chemical bath deposition and Ag by thermal evaporation. Silver (Sb2 S3 /Ag) layered precursors were dipped in Na2 SeSO3 solution followed by annealing and then rapid thermal processing. Also, photovoltaic structures were prepared using AgSb(Sx Se1‐x )2 thin films as absorber and CdS as window material. The effects of rapid thermal processing on the structure, morphology and properties of these thin films were studied. Characterization of the absorber materials was done using X‐ray diffraction, X‐ray photoelectron spectroscopy, Atomic force microscopy, Optical absorption spectroscopy and Current‐voltage characteristics. Analysis of J ‐ V characteristics of the photovoltaic structures under AM1.5 illumination before and after rapid thermal treatment showed V oc in a range of 457 to 473 mV and J sc of 5.8 to 7.2 mA/cm 2 . (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)