Cite
HARVARD Citation
Calabrese, G. et al. (n.d.). Enhanced reduction in threading dislocation density in Ge grown on porous silicon during annealing due to porous buffer reconstruction. Physica status solidi. 213 (1), pp. 96-101. [Online].
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Calabrese, G. et al. (n.d.). Enhanced reduction in threading dislocation density in Ge grown on porous silicon during annealing due to porous buffer reconstruction. Physica status solidi. 213 (1), pp. 96-101. [Online].