MOVPE growth and indium incorporation of polar, semipolar (112‾2) and (202‾1) InGaN. Issue 1 (21st September 2015)

• Record Type: Journal Article
• Authors: Dinh, Duc V.; Pristovsek, Markus; Kneissl, Michael
• Is Part Of: Physica status solidi. Volume 253:Issue 1(2016)
• Page Start: 93
• Page End: 98
• Publication Date: 2015-09-21
• Subjects: InGaN -- Metal‐organic vapour phase epitaxy -- photoluminescence -- semipolar layers; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201552274
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract: InGaN layers were grown simultaneously on polar (0001), and on semipolar (11 2 ‾ 2) and (20 2 ‾ 1) GaN templates with different In/Ga ratios by metalorganic vapour phase epitaxy with a thickness of about 50 nm. The indium content of the layers behaved as follows: (0001) > (11 2 ‾ 2) > (20 2 ‾ 1). The relaxed (0001) layers showed the highest indium content (In ∼ 17.4–48.7%) with an island‐like surface morphology, while the relaxed (11 2 ‾ 2) layers (In ∼ 14.0–40.0%) had nearly unchanged morphology compared to the semipolar GaN templates. The (20 2 ‾ 1) layers exhibited a three‐dimensional morphology that was attributed to differences in growth on the (10 1 ‾ 1) and (10 1 ‾ 0) surfaces. The degree of relaxation also reduced from 100% for the (0001) layers to less than 15% for the (20 2 ‾ 1) layers that was attributed to the lowest indium content of the (20 2 ‾ 1) layers. Room‐temperature photoluminescence (PL) measurements of the semipolar layers showed a peak in emission wavelength that shifts gradually from 450 to 820 nm with increasing indium content. The stronger PL intensity of the semipolar layers was attributed to background impurity and band filling effects in the layers.