Graphene: Extremely Low Contact Resistance on Graphene through n‐Type Doping and Edge Contact Design (Adv. Mater. 5/2016). Issue 5 (February 2016)

• Record Type: Journal Article
• Authors: Park, Hyung‐Youl; Jung, Woo‐Shik; Kang, Dong‐Ho; Jeon, Jaeho; Yoo, Gwangwe; Park, Yongkook; Lee, Jinhee; Jang, Yun Hee; Lee, Jaeho; Park, Seongjun; Yu, Hyun‐Yong; Shin, Byungha; Lee, Sungjoo; Park, Jin‐Hong
• Is Part Of: Advanced materials. Volume 28:Issue 5(2016)
• Page Start: 975
• Page End: 975
• Publication Date: 2016-02
• Subjects: contact resistance -- doping -- edge contact -- graphene -- optoelectronic devices; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201670034
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : The effects of graphene n‐doping on metal–graphene (M–G) contacts in combination with 1D edge contacts is discussed by J.‐H. Park and co‐workers, as described on page 864, presenting a record contact resistance of 23 Ω μm at room temperature (19 Ω μm at 100 K). This is lower than the value required for the latest Si CMOS technology. This contact scheme is applied to graphene–perovskite hybrid photo‐detectors, significantly improvement of its performance (0.6 → 1.8 A W −1 in photoresponsivity and 3.3 × 10 4 → 5.4 × 10 4 Jones in detectivity).