A layered antiferromagnetic semiconductor EuMTe3 (M = Bi, Sb). Issue 12 (6th November 2015)

• Record Type: Journal Article
• Authors: Niu, Ying Y.; Wu, Dong; Shen, Liang; Wang, Biao
• Is Part Of: Physica status solidi. Volume 9:Issue 12(2015:Dec.)
• Page Start: 735
• Page End: 739
• Publication Date: 2015-11-06
• Subjects: XRD -- crystal structure -- antiferromagnetic semiconductor; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201510344
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : We synthesized ternary tellurides EuMTe3 (M = Bi, Sb) using a low‐temperature flux method. These compounds crystallize in the P mmn space group with layered structure. A superstructure modulation along the b ‐axis was observed. Physical property measurements revealed that these compounds are antiferromagnetic semiconductors. Finally, a strong spin–orbit coupling with possible novel quantum interference between localization and weak antilocalization effects was suggested in the present system. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) Abstract : A new antiferromagnetic semiconductor material, EuMTe3 (M = Bi, Sb), is reported for the first time. These compounds crystallize in the Pmmn space group with layered structure consisting of Te sheets and M/Eu/Te slabs. At low temperature and magnetic field, an abnormal positive magnetoresistance (MR) followed by a large negative MR at higher magnetic fields was detected, rendering a complex effect between spin–orbit coupling and magnetic interactions.