Point defects and interference effects in electron emission of Si/SiO2:Li, Na, K structures. Issue 12 (2nd September 2015)

• Record Type: Journal Article
• Authors: Buntov, Evgeny; Zatsepin, Anatoly; Slesarev, Anatoly; Mikhailovich, Anna; Mikhaylov, Alexey
• Is Part Of: Physica status solidi. Volume 212:Issue 12(2015:Dec.)
• Page Start: 2672
• Page End: 2676
• Publication Date: 2015-09-02
• Subjects: electron emission -- ion implantation -- point defects -- silica -- silicon; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201532446
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : SiO2 films, grown on a Si substrate and implanted with Li, Na, and K ions were studied by means of optically stimulated electron emission spectroscopy (OSEE). Interference effects of exciting light were observed in OSEE spectra. Application of original normalization technique allowed to compensate interference fringes in the experimental results. Three categories of defect states were identified and studied: intrinsic luminescent, emission‐active silica defect centers, and implanted cation‐related localized states.