In Situ Tuning of Switching Window in a Gate‐Controlled Bilayer Graphene‐Electrode Resistive Memory Device. (26th October 2015)

• Record Type: Journal Article
• Authors: Tian, He; Zhao, Haiming; Wang, Xue‐Feng; Xie, Qian‐Yi; Chen, Hong‐Yu; Mohammad, Mohammad Ali; Li, Cheng; Mi, Wen‐Tian; Bie, Zhi; Yeh, Chao‐Hui; Yang, Yi; Wong, H.‐S. Philip; Chiu, Po‐Wen; Ren, Tian‐Ling
• Is Part Of: Advanced materials. Volume 27:Number 47(2015)
• Page Start: 7767
• Page End: 7774
• Publication Date: 2015-10-26
• Subjects: bilayer graphene -- gate controlled -- in situ -- resistive memory -- switching windows; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201503125
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from −10 to +35 V. The gate‐controlled bilayer graphene‐electrode RRAM can function as 1D1R and potentially increase the RRAM density.