Laser Desorption Ionisation Time‐of‐Flight Mass Spectrometry of Chalcogenide Glasses from (GeSe2)100−x(Sb2Se3)x System. Issue 12 (23rd September 2015)

• Record Type: Journal Article
• Authors: Šútorová, Katarína; Prokeš, Lubomír; Nazabal, Virginie; Bouška, Marek; Havel, Josef; Němec, Petr
• Is Part Of: Journal of the American Ceramic Society. Volume 98:Issue 12(2015)
• Page Start: 4107
• Page End: 4110
• Publication Date: 2015-09-23
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.13857
• Languages: English
• ISSNs: 0002-7820

Abstract

Abstract : Laser Desorption Ionization Time‐of‐Flight Mass Spectrometry (LDI TOFMS) was used to characterize chalcogenide glasses from pseudobinary (GeSe2 )100− x (Sb2 Se3 ) x system, where x = 5–60, aiming description of their partial structure through the analysis of the plasma formed due to interaction of pulsed laser beam with studied glasses. The plasma contains positively or negatively charged clusters; their stoichiometry was determined as Se c − ( c = 2–3), Sb +, Se2 +, and Sb3 + ; binary GeSe c +, SbSe c +/− ( c = 1–2), Sb b Se c + ( b = 2–3, c = 1–4), Ge a Sb3 + ( a = 1–4), Sb2 Se c − ( c = 3–4), SbSe3 −, and Sb3 Se5 + ; ternary GeSbSe2 +, GeSbSe c − ( c = 3–5), GeSb b Se + ( b = 4–5), and Ge9 Sb2 Se c + ( c = 5–7) ones. Described method is generally useful not only for partial structural characterization of chalcogenide glasses and corresponding thin films but also for evaluation of their contamination with oxygen and/or hydrogen.