Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application. Issue 11 (20th October 2015)

• Record Type: Journal Article
• Authors: Feng, Wuwei; Fu, Xiao; Wan, Caihua; Yuan, Zhonghui; Han, Xiufeng; Quang, Nguyen Van; Cho, Sunglae
• Is Part Of: Physica status solidi. Volume 9:Issue 11(2015:Nov.)
• Page Start: 641
• Page End: 645
• Publication Date: 2015-10-20
• Subjects: Ti2MnAl -- spin gapless semiconductors -- spintronics -- Heusler compounds; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201510340
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : A novel Heusler ferrimagnet Ti2 MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin‐gapless‐semiconductor (SGS) nature of the stoichiometric Ti2 MnAl, in agreement with theoretical prediction. The as‐grown SGS‐like Ti2 MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor‐like behavior at room temperature allowing good compatibility with commercial Si‐based semiconductor. In this regards, Ti2 MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) Abstract : This work is the first attempt to grow successfully a Ti2 ‐based full Heusler compound, Ti2 MnAl, which is an important material for future spintronics applications as ab‐initio electronic structure calculations have predicted, and will pave the way for future experimental studies on these promising materials.