Effects of assisting ion energy and current on MgO films fabricated by ion-beam-assisted sputtering deposition. (November 2015)

• Record Type: Journal Article
• Authors: Tong, S.; Liu, H. N.; Li, X.; Wang, Z.
• Is Part Of: Materials research innovations. Volume 19(2015)Supplement 8
• Page Start: S8-702
• Page End: S8-704
• Publication Date: 2015-11
• Subjects: MgO thin film -- Ion-beam-assisting deposition -- X-ray diffraction -- Orientation selection -- Surface morphology; Materials -- Research -- Periodicals; Matériaux -- Recherche -- Périodiques; 620.1105
• DOI: 10.1179/1432891715Z.0000000001781
• Languages: English
• ISSNs: 1432-8917

Abstract

Abstract : MgO films were prepared by ion-beam-assisted sputtering deposition from a metal magnesium target. Effects of assisting ion energy E a and current density J a on the orientation and surface morphology of the films were analysed in detail. The results show that moderate E a and J a could enhance the crystallinity, but high E a and J a can destroy the crystallinity of the films. Assisting ion energy E a is an important factor for orientation selection, and the formation of (100) orientation needs high E a and low J a .