Hierarchical Pore Development by Plasma Etching of Zr‐Based Metal–Organic Frameworks. Issue 50 (23rd October 2015)

• Record Type: Journal Article
• Authors: DeCoste, Jared B.; Rossin, Joseph A.; Peterson, Gregory W.
• Is Part Of: Chemistry. Volume 21:Issue 50(2015)
• Page Start: 18029
• Page End: 18032
• Publication Date: 2015-10-23
• Subjects: hierarchical porosity -- mesoporous materials -- metal–organic frameworks -- plasma etching -- UiO‐66; Chemistry -- Periodicals; 540
• DOI: 10.1002/chem.201503632
• Languages: English
• ISSNs: 0947-6539

Abstract

Abstract: The typically stable Zr‐based metal–organic frameworks (MOFs) UiO‐66 and UiO‐66‐NH2 were treated with tetrafluoromethane (CF4 ) and hexafluoroethane (C2 F6 ) plasmas. Through interactions between fluoride radicals from the perfluoroalkane plasma and the zirconium–oxygen bonds of the MOF, the resulting materials showed the development of mesoporosity, creating a hierarchical pore structure. It is anticipated that this strategy can be used as a post‐synthetic technique for developing hierarchical networks in a variety of MOFs. Abstract : Hierarchical porosity : Perfluoroalkane plasmas were used to etch Zr‐based metal–organic frameworks (MOFs), resulting in the formation of mesoporous structures. The resulting frameworks exhibited enhanced diffusion and reaction against the chemical warfare agent VX ( O ‐ethyl S ‐[2‐(diisopropylamino)ethyl] methylphosphonothioate; see scheme).