All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2/Graphene Heterostructures. (7th October 2015)

• Record Type: Journal Article
• Authors: Shi, Jianping; Liu, Mengxi; Wen, Jinxiu; Ren, Xibiao; Zhou, Xiebo; Ji, Qingqing; Ma, Donglin; Zhang, Yu; Jin, Chuanhong; Chen, Huanjun; Deng, Shaozhi; Xu, Ningsheng; Liu, Zhongfan; Zhang, Yanfeng
• Is Part Of: Advanced materials. Volume 27:Number 44(2015)
• Page Start: 7086
• Page End: 7092
• Publication Date: 2015-10-07
• Subjects: exciton binding energies -- intrinsic bandgaps -- graphene heterostructures -- quasi‐freestanding MoS2 -- scanning tunneling microscopy; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201503342
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A facile all‐chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2 /Gr vertical heterostructures on Au foils. A weak n‐doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2 /Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.