Tuning the Tunneling Rate and Dielectric Response of SAM‐Based Junctions via a Single Polarizable Atom. (28th September 2015)

• Record Type: Journal Article
• Authors: Wang, Dandan; Fracasso, Davide; Nurbawono, Argo; Annadata, Harshini V.; Sangeeth, C. S. Suchand; Yuan, Li; Nijhuis, Christian A.
• Is Part Of: Advanced materials. Volume 27:Number 42(2015)
• Page Start: 6689
• Page End: 6695
• Publication Date: 2015-09-28
• Subjects: dielectric response -- EGaIn -- molecular electronics -- self‐assembled monolayers -- tunneling junctions; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201502968
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : The dielectric response and electrical properties of junctions based on self‐assembled monolayers (SAMs) of the form S(CH2 )11 X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000‐fold increase in the tunneling rate and a four‐fold increase of the dielectric constant ( ε r ) with increasing polarizability of X are found.